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PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
V DSS = 600 V
I D25 = 36 A
R DS(on) ≤ 190 m ?
t rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
600
600
V
V
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
D (TAB)
I D25
I DM
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
36
80
36
50
1.5
A
A
A
mJ
J
TO-268 (IXFT) Case Style
G
dv/dt
P D
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
20
650
V/ns
W
S
TO-264 AA (IXFK)
D (TAB)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
M d
Mounting torque (TO-247 & TO-264)
1.13/10 Nm/lb.in.
Weight
TO-247
TO-268
6
5
g
g
G
D
S
(TAB)
TO-264
10
g
G = Gate
D = Drain
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
S = Source
Features
Tab = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
600 V
l
l
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
V GS(th)
I GSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V DC , V DS = 0
3.0
5.0
± 200
V
nA
l
rated
Low package inductance
- easy to drive and to protect
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
100
1000
μ A
μ A
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
190
m ?
l
l
Easy to mount
Space savings
? 2006 IXYS All rights reserved
l
High power density
DS99383E(02/06)
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